CEM2005 Chino Excel Technology, CEM2005 Datasheet

no-image

CEM2005

Manufacturer Part Number
CEM2005
Description
Dual Enhancement Mode Field Effect Transistor
Manufacturer
Chino Excel Technology
Datasheet
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
THERMAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS (T
FEATURES
-20V , -4.3A , R
20V , 6.0A , R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface Mount Package.
Gate-Source Voltage
Drain Current-Continuous
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Parameter
R
R
-Pulsed
DS(ON)
DS(ON)
DS(ON)
DS(ON)
=30m
=65m
=100m @V
=40m
a
a
@V
@V
@V
GS
GS
GS
GS
=4.5V.
=-4.5V.
=2.5V.
=-2.5V.
a
SO-8
a
1
A
T
=25 C unless otherwise noted)
Symbol
DS(ON)
J
R
V
, T
V
I
P
DM
I
GS
I
DS
D
S
D
STG
1
JA
.
N-Channel P-Channel
CEM2005
1.7
20
24
8
6
-55 to 150
2.0
62.5
D
S
8
1
1
1
-1.7
-20
4.3
20
8
D
G
7
2
PRELIMINARY
1
1
D
S
6
3
2
2
Unit
W
C
D
G
V
V
A
A
A
5
4
C
/W
2
2
5

Related parts for CEM2005

CEM2005 Summary of contents

Page 1

... GS @V =-4.5V. GS =-2.5V DS(ON) SO-8 1 =25 C unless otherwise noted) A Symbol N-Channel P-Channel STG CEM2005 PRELIMINARY Unit ...

Page 2

... CEM2005 N-Channel ELECTRICAL CHARACTERISTICS (T Parameter 5 OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time ...

Page 3

... V = -10V, D(ON -1A -4.5V, GEN Ω D(OFF) GEN =-10V -4.3A =-4. CEM2005 C Min Typ Max Unit -30 µ 100 nA -0.5 -1 mΩ mΩ 80 100 -15 5.8 1430 800 325 135 56 100 ...

Page 4

... CEM2005 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS 5 Diode Forward Voltage Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-Channel 10 V =4.5,3.5,2. 0 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics ...

Page 5

... Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current 5 V =10V =4. Qg, Total Gate Charge (nC) Figure 9. Gate Charge CEM2005 1.15 I =250 A D 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature =15V 0.1 20 0.4 0.6 ...

Page 6

... CEM2005 P-Channel Drain-to-Source Voltage (V) DS Figure 11. Output Characteristics 1800 1500 1200 900 600 300 Drain-to Source Voltage (V) DS Figure 13. Capacitance 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 Tj, Junction Temperature ( C) Figure 15. Gate Threshold Variation with Temperature -V =10 thru 5V GS ...

Page 7

... Drain-Source Current (A) DS Figure 17. Transconductance Variation with Drain Current 10 V =-10V =-4. Qg, Total Gate Charge (nC) Figure 19. Gate Charge CEM2005 1. = 1.10 I =250 A D 1.05 1.00 1 0.95 0.90 0.1 0.85 - 0.4 0 Body Diode Forward Voltage (V) SD Figure 18. Body Diode Forward Voltage ...

Page 8

... CEM2005 GEN Figure 21. Switching Test Circuit D=0.5 1 Duty Cycle=0.5 0.2 -1 0.1 10 0.2 0.05 0.1 0.02 0.1 0.05 0. 0.02 Single Pulse -3 0. Figure 23. Normalized Thermal Transient Impedance Curve Figure 13. Normalized Thermal Transient Impedance Curve OUT G S Single Pulse - ...

Related keywords