CEM2005 Chino Excel Technology, CEM2005 Datasheet - Page 2

• Manufacturer Part Number: CEM2005
• Description: Dual Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

5
N-Channel ELECTRICAL CHARACTERISTICS (T
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Output Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Gate-Drain Charge
OFF CHARACTERISTICS
Drain-Source On-State Resistance
On-State Drain Current
Input Capacitance
Turn-Off Delay Time
Total Gate Charge
Gate-Source Charge
Reverse Transfer Capacitance
Rise Time
Fall Time
CEM2005
Parameter
b
c
c
Symbol
R
V
BV
t
I
t
D(OFF)
C
I
D(ON)
C
C
I
DS(ON)
GS(th)
D(ON)
g
Q
Q
DSS
GSS
Q
OSS
RSS
t
t
FS
ISS
DSS
r
f
gs
gd
g
2
V
V
V
V
V
V
V
V
V
I
V
R
V
V
V
f =1.0MH
D
GS
DS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
DS
GEN
= 1A,
Condition
= 0V, I
= V
= 20V, V
= 5V, V
= 15V, I
= 8V, V
= 4.5V, I
= 2.5V, I
=8V, V
=10V, I
= 10V,
= 4.5V,
=4.5V
= 6
GS
Ω
, I
Z
D
GS
D
D
GS
D
A
= 250µA
D
D
GS
= 250µA
= 5.0A
= 4.7A,
DS
= 0V
=25 C unless otherwise noted)
= 5.0A
= 4.2A
= 10V
= 0V
= 0V
Min Typ Max Unit
0.5
20
20
140
10
500
300
2.3
2.9
20
18
10
24
32
28
60
C
108
15
100 nA
40
40
56
30
40
1
1
µA
mΩ
mΩ
P
P
ns
ns
ns
nC
nC
nC
P
ns
V
S
V
A
F
F
F