CEM2005 Chino Excel Technology, CEM2005 Datasheet - Page 4

• Manufacturer Part Number: CEM2005
• Description: Dual Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

5
ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
CEM2005
Parameter
600
500
400
300
200
100
10
6
8
4
2
0
0
Figure 1. Output Characteristics
0
V
V
DS
DS
Figure 3. Capacitance
0.5
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
V
GS
=4.5,3.5,2.5V
1.0
1.5
2.0
Coss
Crss
Ciss
Symbol
V
GS
V
2.5
=2.0V
SD
A
3.0
=25 C unless otherwise noted)
V
V
4
GS
GS
b
= 0V, Is = 1.7A N-Ch
= 0V, Is =-1.7A P-Ch
Condition
Figure 4. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1.80
1.60
1.40
1.20
1.00
0.80
0.60
25
20
15
10
0.0
5
0
-50 -25
Figure 2. Transfer Characteristics
V
GS
I
V
D
Tj=125 C
=5A
=4.5V
0.5
GS
T
T
, Gate-to-Source Voltage (V)
J
J
0
, Junction Temperature( C)
, Junction Temperature( C)
1
25
Temperature
Temperature
50
1.5
Min Typ Max Unit
75
2
-55 C
25 C
100 125 150
2.5
C
-1.2
1.2
3
V