CEM2005 Chino Excel Technology, CEM2005 Datasheet - Page 5

• Manufacturer Part Number: CEM2005
• Description: Dual Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

Figure 7. Transconductance Variation
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
Figure 5. Gate Threshold Variation
20
16
12
8
4
5
4
3
2
1
0
0
-50 -25
0
0
I
Tj, Junction Temperature ( C)
V
I
DS
2
D
Figure 9. Gate Charge
DS
=4.5A
Qg, Total Gate Charge (nC)
, Drain-Source Current (A)
with Drain Current
=10V
with Temperature
0
4
5
25 50
6
10
8
75 100 125 150
10 12 14 16
V
I
D
DS
=250 A
15
=V
V
GS
DS
=15V
20
5
Figure 6. Breakdown Voltage Variation
Figure 8. Body Diode Forward Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.1
10
10
10
10
10
20
10
1
-50 -25
-2
2
-1
1
0
0.4
10
CEM2005
-2
Single Pulse
I
Figure 10. Maximum Safe
V
Tj, Junction Temperature ( C)
D
Tj=150 C
T
Variation with Source Current
=250 A
SD
A
with Temperature
=25 C
, Body Diode Forward Voltage (V)
0.6
V
DS
10
0
, Drain-Source Voltage (V)
-1
25
0.8
Operating Area
10
50
0
1.0
75 100 125 150
10
1
1.2
1.4
10
2
5