CEM2005 Chino Excel Technology, CEM2005 Datasheet - Page 6

• Manufacturer Part Number: CEM2005
• Description: Dual Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

5
P-Channel
CEM2005
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
Figure 15. Gate Threshold Variation
1800
1500
1200
20
16
12
900
600
300
8
4
0
Figure 11. Output Characteristics
-50 -25
0
0
0
-V
-V
Figure 13. Capacitance
Tj, Junction Temperature ( C)
DS
DS
1
2
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
0
with Temperature
2
4
25 50
-V
GS
6
3
=10 thru 5V
75 100 125 150
V
I
D
8
4
DS
=-250 A
Coss
Crss
Ciss
=V
-V
GS
10
GS
5
=4V
12
6
6
Figure 16. Breakdown Voltage Variation
Figure 14. On-Resistance Variation with
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.80
1.60
1.40
1.20
1.00
0.80
0.60
25
20
15
10
0.0
5
0
-50 -25
Figure 12. Transfer Characteristics
-50 -25
V
I
D
GS
I
-V
=-4.3A
Tj, Junction Temperature ( C)
D
Tj=125 C
=-10V
=-250 A
0.5
GS
with Temperature
T
, Gate-to-Source Voltage (V)
J
0
0
, Junction Temperature( C)
1
25
25
Temperature
50
50
1.5
75
75 100 125 150
2
-55 C
25 C
100 125 150
2.5
3