CEM2005 Chino Excel Technology, CEM2005 Datasheet - Page 3

• Manufacturer Part Number: CEM2005
• Description: Dual Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

P-Channel ELECTRICAL CHARACTERISTICS (T
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Output Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Gate-Drain Charge
OFF CHARACTERISTICS
Drain-Source On-State Resistance
On-State Drain Current
Input Capacitance
Turn-Off Delay Time
Total Gate Charge
Gate-Source Charge
Reverse Transfer Capacitance
Rise Time
Fall Time
Parameter
b
c
c
Symbol
R
V
BV
t
I
t
D(OFF)
C
I
D(ON)
C
C
I
DS(ON)
GS(th)
D(ON)
g
Q
Q
DSS
GSS
Q
OSS
RSS
t
t
FS
ISS
DSS
r
f
gs
gd
g
3
V
V
V
V
V
V
V
V
V
I
V
R
V
V
V
f =1.0MH
D
GS
DS
DS
GS
GS
GS
DS
DS
DD
GEN
DS
GS
DS
GEN
= -1A,
Condition
= 0V, I
= V
= -20V, V
= -5V, V
= -15V, I
= 8V, V
= -10V, I
= -4.5V, I
=-8V, V
=-10V, I
= -10V,
=-4.5V
= -4.5V,
= 6
GS
Ω
, I
Z
D
D
GS
A
D
= 250µA
GS
D
D
= -250µA
D
GS
=25 C unless otherwise noted)
DS
= -4.3A,
= -4.5A
= -4.5A
= 0V
= -3.6A
= -10V
= 0V
= 0V
CEM2005
Min Typ Max Unit
-30
-0.5
-15
1430
800
325
50
5.8
80
20
21
19
76
56
3
5
C
135
100
100
45
25
65
45
-1
100 nA
-1
µA
mΩ
mΩ
P
P
ns
ns
ns
nC
nC
nC
P
ns
V
S
V
A
F
F
F
5