MT28C256532W18S Micron Semiconductor Products, Inc., MT28C256532W18S Datasheet - Page 16

• Manufacturer Part Number: MT28C256532W18S
• Description: 256Mb Multibank Burst Flash 32Mb/64Mb Async/page Cellularram Combo, 88-Ball Fbga
• Manufacturer: Micron Semiconductor Products, Inc.

Table 11: CFI
09005aef80bcd58d
MT28C256564W18S_A.fm - Rev. A, Pub 6/03 EN
OFFSET
02 – 0F
19, 1A
2A, 2B
2D, 2E
39, 3A
10, 11
13, 14
15, 16
17, 18
31, 32
33, 34
35, 36
37, 38
2F, 30
1D
3D
00
01
12
1B
1C
1E
20
21
22
23
24
25
26
27
28
29
2C
3B
3C
1F
0051, 0052
0003, 0000
0039, 0000
0000, 0000
0000, 0000
0000, 0000
007E, 0000
0007, 0000
0000, 0001
0020, 0000
0007, 0000
007E, 0000
0020, 0000
0000, 0001
0000, 0000
0000, 0000
0050, 0052
reserved
DATA
44C6h
44C7h
000A
0059
0017
0019
00B4
00C6
0004
0000
0000
0004
0000
0002
0000
0017
0001
0000
0002
0049
0031
0033
2Ch
Manufacturer code
Top boot block device code
Bottom boot block device code
Reserved
“QR”
“Y”
Primary OEM command set
Address for primary extended table
Alternate OEM command set
Address for OEM extended table
V
V
V
V
Typical timeout for single byte/word program, 2
Typical timeout for maximum size multiple byte/word program, 2
Typical timeout for individual block erase, 2
Typical timeout for full chip erase, 2
Maximum timeout for single byte/word program, 2
Maximum timeout for maximum size multiple byte/word program, 2
supported
Maximum timeout for individual block erase, 2
Maximum timeout for full chip erase, 2
Device size, 2
Bus interface x8 = 0, x16 = 1, x32 = 2, x64 = 3
Flash device interface description 0000 = async
Maximum number of bytes in multibyte program or page, 2
Number of erase block regions within device (4K words and 32K words)
Top boot block device erase block region information 1
Bottom boot block device erase block region information 1
Top boot block device erase block region information 1
Bottom boot block device erase block region information 1
Top boot block device erase block region information 2
Bottom boot block device erase block region information 2
Top boot block device erase block region information 2
Bottom boot block device erase block region information 2
Reserved for future erase block region information
Reserved for future erase block region information
“PR”
“I”
Major version number, ASCII
Minor version number, ASCII
CC
CC
PP
PP
MIN for Erase/Write; Bit 7–bit 4 volts in hex; Bit 3–bit 0 100mV in BCD
MAX for Erase/Write; Bit 7–bit 4 Volts in hex; Bit 3–bit 0 100mV in BCD
MIN for Erase/Write; Bit 7–bit 4 volts in BCD; Bit 3–bit 0 100mV in BCD
MAX for Erase/Write; Bit 7–bit 4 volts in BCD; Bit 3–bit 0 100mV in BCD
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
n
bytes
16
256Mb MULTIBANK BURST FLASH
n
s, 0000 = not supported
n
DESCRIPTION
s, 0000 = not supported
Micron Technology, Inc., reserves the right to change products or specifications without notice.
n
s, 0000 = not supported
n
n
s, 0000 = not supported
µs, 0000 = not supported
n
µs, 0000 = not supported
n
n
µs, 0000 = not supported
n
µs, 0000 = not
©2003 Micron Technology. Inc.
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