MT54W1MH18B Micron Semiconductor Products, Inc., MT54W1MH18B Datasheet - Page 18

• Manufacturer Part Number: MT54W1MH18B
• Description: 18Mb Qdrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE
18Mb: 1.8V V
MT54W1MH18B_H.fm – Rev. H, Pub. 3/03
1. Q00 refers to output from address A0 + 1. Q01 refers to output from the next internal burst address following
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as
CQ#
W#
CQ
K#
R#
C#
A0, i.e., A0 + 1.
read results. (This note applies to whole diagram.)
Q
A
D
K
C
:
1
A0
D10
DD
READ
t KHCH
(Note 3)
, HSTL, QDRIIb2 SRAM
t KHKL
t AVKH t KHAX
t KHKL
D11
A1
2
WRITE
t
IVKH
t KLKH
t AVKH t KHAX
t KLKH
t KHCH
D30
A2
3
READ
t DVKH
t KHKH
t CHQX1
t CHCQX
t KHIX
t
t KHK#H
t CHCQV
t CHQV
D31
A3
4
WRITE
t KHDX
t CHCQX
READ/WRITE Timing
t CHCQV
t CHQX
Q00
D50
A4
(Note 1)
5
READ
Figure 6:
t KHK#H
t KHKH
18
t CHQV
t CHQX
Q01
2 MEG
D51
A5
6
WRITE
t DVKH
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q20
D60
X
t CQHQV
7
NOP
8, 1 MEG
DD
t KHDX
, HSTL, QDRIIb2 SRAM
Q21
D61
A6
8
DON’T CARE
WRITE
(Note 2)
X
18, 512K
Q40
9
NOP
UNDEFINED
©2003 Micron Technology, Inc.
t CHQZ
Q41
10
X
36