MT54W1MH18B Micron Semiconductor Products, Inc., MT54W1MH18B Datasheet - Page 4

• Manufacturer Part Number: MT54W1MH18B
• Description: 18Mb Qdrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE
18Mb: 1.8V V
MT54W1MH18B_H.fm – Rev. H, Pub. 3/03
1. Figure 2 illustrates simplified device operation. See truth table, ball descriptions, and timing diagrams for detailed
2. For 2 Meg x 8, n = 20, a = 8; NWx# = 2 separate nibble writes.
NWx# or BWx#
information.
For 1 Meg x 18, n = 19, a = 18; BWx# = 2 separate byte writes.
For 512K x 36, n = 18, a = 36; BWx# = 2 separate byte writes.
D (Data In)
ADDRESS
:
DD
, HSTL, QDRIIb2 SRAM
W#
R#
K#
K#
K
K
W#
R#
n
a
REGISTRY
REGISTRY
ADDRESS
& LOGIC
& LOGIC
DATA
Figure 2: Functional Block Diagram
2a
n
2 Meg x 8; 1 Meg x 18; 512K x 36
K
W
R
T
E
I
G
R
E
2
W
R
T
E
I
D
R
V
R
E
I
MEMORY
2
ARRAY
n
4
x a
2 MEG
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
N
S
E
S
E
M
A
P
S
X
MUX
8, 1 MEG
DD
, HSTL, QDRIIb2 SRAM
2a
C
R
G
A
E
O
U
U
T
P
T
C, C#
K, K#
or
X
2a
18, 512K
O
U
U
T
P
T
S
E
L
E
C
T
O
U
U
T
P
T
©2003 Micron Technology, Inc.
U
B
F
F
E
R
(Echo Clock Out)
a
(Data Out)
2
CQ, CQ#
X
Q
36