MT55L1MY18P Micron Semiconductor Products, Inc., MT55L1MY18P Datasheet - Page 19

• Manufacturer Part Number: MT55L1MY18P
• Description: 18Mb ZBT SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Pipelined,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1MY18P_16_D.fm – Rev. D, Pub. 2/03
COMMAND
1. For these waveforms, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
ADDRESS
ADV/LD#
recent data may be from the input data register.
BWx#
R/W#
CKE#
OE#
CLK
CE#
DQ
t EVKH
t CVKH
t AVKH
WRITE
D(A1)
A1
1
t KHEX
t KHCX
t KHAX
t DVKH
WRITE
D(A1)
D(A2)
A2
2
t KHKL
t KHDX
t KHKH
t KLKH
D(A2+1)
BURST
WRITE
D(A2)
3
READ/WRITE Timing
D(A2+1)
Q(A3)
READ
A3
4
t KHQV
t KHQX1
Figure 8:
19
Q(A4)
READ
Q(A3)
A4
5
t KHQX
18Mb: 1 MEG x 18, 512K x 32/36
t GHQZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q(A4+1)
BURST
Q(A4)
READ
6
t GLQV
t GLQX
Q(A4+1)
WRITE
D(A5)
A5
7
PIPELINED ZBT SRAM
t KHQZ
t KHQX
DON’T CARE
READ
Q(A6)
A6
D(A5)
8
WRITE
D(A7)
Q(A6)
A7
9
©2003 Micron Technology, Inc.
UNDEFINED
DESELECT
D(A7)
10