MT58L128L18P Micron Semiconductor Products, Inc., MT58L128L18P Datasheet - Page 9

• Manufacturer Part Number: MT58L128L18P
• Description: 2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Pipelined, Scd,
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMENDED FOR NEW DESIGNS
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
V
Storage Temperature (plastic) ........... -55°C to +150°C
Junction Temperature** ................................... +150°C
Short Circuit Output Current .......................... 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
NOTE: 1. All voltages referenced to V
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L128L18P_C.p65 – Rev. C, Pub. 11/02
IN
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
Relative to V
Relative to V
.............................................. -0.5V to V
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
Undershoot:
Power-up:
than the shown DC values. AC I/O curves are available upon request.
≤ +70°C; V
DD
Q should never exceed V
DD
DD
Q Supply
SS
SS
Supply
.................................. -0.5V to +4.6V
.................................. -0.5V to +4.6V
DD
V
V
V
, V
IH
IL
IH
≥ -0.7V for t ≤
DD
≤ +4.6V for t ≤
≤ +3.6V and V
OH
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
SS
DD
(GND).
. V
DD
t
Output(s) disabled,
KC/2 for I ≤ 20mA
DD
t
KC/2 for I ≤ 20mA
≤ 3.135V for t ≤ 200ms
and V
CONDITIONS
0V ≤ V
0V ≤ V
I
DD
I
OH
OL
Q + 0.5V
= -4.0mA
= 8.0mA
DD
IN
IN
Q can be connected together for 3.3V I/O.
≤ V
≤ V
DD
DD
9
PIPELINED, SCD SYNCBURST SRAM
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature,
and airflow. See Micron Technical Note TN-05-14 for
more information.
SYMBOL
2Mb: 128K x 18, 64K x 32/36
V
V
V
V
V
V
IL
DD
IL
OH
DD
OL
IH
IL
O
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
3.135
MIN
-0.3
-1.0
-1.0
2.0
2.4
–
V
DD
MAX
0.8
1.0
1.0
0.4
3.6
3.6
–
+ 0.3
UNITS
µA
µA
V
V
V
V
V
V
©2002, Micron Technology, Inc.
NOTES
1, 2
1, 2
1, 4
1, 4
1, 5
3
1