MT58L128L32D1 Micron Semiconductor Products, Inc., MT58L128L32D1 Datasheet - Page 17
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MT58L128L32D1
Manufacturer Part Number
MT58L128L32D1
Description
4Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT58L128L32D1.pdf
(26 pages)
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TQFP THERMAL RESISTANCE
FBGA THERMAL RESISTANCE
NOTE: 1. This parameter is sampled.
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_F.p65 – Rev. F, 1/03 EN
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Pins
(Bottom)
2. Preliminary package data.
Test conditions follow standard test methods
Test conditions follow standard test methods
and procedures for measuring thermal
and procedures for measuring thermal
impedance, per EIA/JESD51.
impedance, per EIA/JESD51.
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
CONDITIONS
CONDITIONS
17
4Mb: 256K x 18, 128K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
SYMBOL
θ
θ
θ
θ
θ
JA
JC
JA
JC
JB
TYP
TYP
2.8
46
40
17
9
UNITS NOTES
UNITS NOTES
©2003, Micron Technology, Inc.
°C/W
°C/W
°C/W
°C/W
°C/W
1, 2
1, 2
1, 2
1
1