MT58L128L32D1 Micron Semiconductor Products, Inc., MT58L128L32D1 Datasheet - Page 20

• Manufacturer Part Number: MT58L128L32D1
• Description: 4Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time ZZ is in a HIGH state.
After the device enters SNOOZE MODE, all inputs ex-
cept ZZ become gated inputs and are ignored.
NOTE: 1. This parameter is sampled.
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_F.p65 – Rev. F, 1/03 EN
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Outputs (Q)
ALL INPUTS
(except ZZ)
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
SNOOZE MODE is a low-current, “power-down”
I
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t ZZI
t ZZ
I
ISB2Z
SNOOZE MODE WAVEFORM
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
CONDITIONS
ZZ ≥ V
IH
20
High-Z
causes the device to enter SNOOZE MODE. When ZZ
becomes a logic HIGH, I
setup time
pending when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed.
ZZ is an asynchronous, active HIGH input that
4Mb: 256K x 18, 128K x 32/36
SYMBOL
t
t
I
t
RZZI
t
RZZ
SB
ZZI
ZZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2Z
t
ZZ is met. Any READ or WRITE operation
2(
MIN
t
0
KC)
DESELECT or READ Only
t RZZI
SB
2(
2(
MAX
2
Z
10
t
t
KC)
KC)
is guaranteed after the
t RZZ
UNITS
mA
ns
ns
ns
ns
©2003, Micron Technology, Inc.
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NOTES
1
1
1
1