MT58L1MY18F Micron Semiconductor Products, Inc., MT58L1MY18F Datasheet - Page 12

• Manufacturer Part Number: MT58L1MY18F
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

Absolute Maximum Ratings
3.3V V
Voltage on V
Voltage on V
V
V
Storage Temperature (TQFP).................-55ºC to +150ºC
Storage Temperature (FBGA).................-55ºC to +125ºC
Junction Temperature .......................................... +150ºC
Short Circuit Output Current ...............................100mA
2.5V V
Voltage on V
Voltage on V
V
V
Storage Temperature (TQFP).................-55ºC to +150ºC
Storage Temperature (FBGA).................-55ºC to +125ºC
Junction Temperature .......................................... +150ºC
Short Circuit Output Current ...............................100mA
Table 8:
Notes appear following parameter tables on page 17; 0ºC £ T
noted
18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM
MT58L1MY18F_16_D.fm – Rev. D, Pub. 2/03
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
IN
IN
IN
IN
Relative to V
Relative to V
Relative to V
Relative to V
(DQx) ....................................... -0.5V to V
(inputs) ....................................... -0.5V to V
(DQx) ....................................... -0.3V to V
(inputs) ....................................... -0.3V to V
DD
DD
DD
DD
DD
DD
3.3V V
SS
SS
SS
SS
Q Supply
Q Supply
Supply
Supply
....................................... -0.5V to +4.6V
....................................... -0.5V to +4.6V
....................................... -0.3V to +3.6V
....................................... -0.3V to +3.6V
DD
, 3.3V I/O DC Electrical Characteristics and Operating Conditions
0V £ V
Output(s) disabled,
0V £ V
CONDITIONS
I
OH
I
OL
IN
= -4.0mA
= 8.0mA
£ V
DD
DD
IN
DD
DD
Q + 0.5V
Q + 0.3V
DD
£ V
+ 0.5V
+ 0.3V
DD
12
FLOW-THROUGH SYNCBURST SRAM
A
SYMBOL
£ +70ºC; V
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
package type, cycle time, loading, ambient tempera-
ture, and airflow.
V
V
V
18Mb: 1 MEG x 18, 512K x 32/36
V
V
IL
V
DD
IL
OH
DD
OL
IH
Stresses greater than those listed may cause perma-
Maximum Junction Temperature depends upon
IL
O
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
and V
3.135
3.135
MIN
-0.3
-1.0
-1.0
2.0
2.4
–
DD
Q = 3.3V ±0.165V unless otherwise
V
DD
MAX
3.465
V
0.8
1.0
1.0
0.4
–
DD
+ 0.3
UNITS
©2003 Micron Technology, Inc.
µA
µA
V
V
V
V
V
V
NOTES
1, 2
1, 2
1, 5
4
1
1
1