MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet - Page 20

• Manufacturer Part Number: MT58L256L32F
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

3.3V I/O AC TEST CONDITIONS
LOAD DERATING CURVES
SRAM timing is dependent upon the capacitive loading
on the outputs.
voltage curves.
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
Input pulse levels ................. V
Input rise and fall times ..................................... 1ns
Input timing reference levels ..................... V
Output reference levels ............................ V
Output load ............................. See Figures 1 and 2
Micron 512K x 18, 256K x 32, and 256K x 36 SyncBurst
Consult the factory for copies of I/O current versus
3.3V I/O OUTPUT LOAD EQUIVALENT
3.3V I/O OUTPUT LOAD EQUIVALENT
Q
Q
351
Z = 50
................... V
O
Figure 1
Figure 2
+3.3V
V = 1.5V
T
IH
IL
317
5pF
= (V
= (V
50
DD
DD
/2.2) + 1.5V
/2.2) - 1.5V
DD
DD
Q/2.2
/2.2
20
FLOW-THROUGH SYNCBURST SRAM
2.5V I/O AC TEST CONDITIONS
Input pulse levels ............. V
Input rise and fall times ..................................... 1ns
Input timing reference levels ................... V
Output reference levels ............................... V
Output load ............................. See Figures 3 and 4
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2.5V I/O OUTPUT LOAD EQUIVALENT
2.5V I/O OUTPUT LOAD EQUIVALENT
Q
Q
225
............... V
Z = 50
O
Figure 3
Figure 4
+2.5V
IH
IL
V = 1.25V
= (V
= (V
T
225
5pF
DD
DD
©2002, Micron Technology, Inc.
/2.64) + 1.25V
50
/2.64) - 1.25V
DD
DD
/2.64
Q/2