MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet - Page 3

• Manufacturer Part Number: MT58L256L32F
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

GENERAL DESCRIPTION (continued)
CE2# is not available on the T Version.
clock (CLK) and snooze enable (ZZ). There is also a burst
mode input (MODE) that selects between interleaved
and linear burst modes. The data-out (Q), enabled by
OE#, is also asynchronous. WRITE cycles can be from
one to two bytes wide (x18) or from one to four bytes wide
(x32/x36), as controlled by the write control inputs.
status processor (ADSP#) or address status controller
(ADSC#) inputs. Subsequent burst addresses can be in-
ternally generated as controlled by the burst advance
input (ADV#).
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes to
be written. During WRITE cycles on the x18 device, BWa#
controls DQa pins and DQPa; BWb# controls DQb pins
and DQPb. During WRITE cycles on the x32 and x36
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
enables (BWx#) and global write (GW#). Note that
Asynchronous inputs include the output enable (OE#),
Burst operation can be initiated with either address
Address and write control are registered on-chip to
FLOW-THROUGH SYNCBURST SRAM
3
devices, BWa# controls DQa pins and DQPa; BWb#
controls DQb pins and DQPb; BWc# controls DQc pins
and DQPc; BWd# controls DQd pins and DQPd. GW#
LOW causes all bytes to be written. Parity bits are only
available on the x18 and x36 versions.
V
compatible. Users can choose either a 3.3V or 2.5V I/O
version. The device is ideally suited for 486, Pentium
680x0 and PowerPC systems and those systems that ben-
efit from a wide synchronous data bus. The device is also
ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-wide
applications.
sramds) for the latest data sheet.
TQFP PINOUTS
two pinouts in the industry. Micron will support both
pinouts for this part.
DD
Micron’s 8Mb SyncBurst SRAMs operate from a +3.3V
Please refer to Micron’S Web site
At the time of the writing of this data sheet, there are
power supply, and all inputs and outputs are TTL-
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(www.micron.com/
©2002, Micron Technology, Inc.
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