VS-EMF050J60U Vishay, VS-EMF050J60U Datasheet - Page 10

• Manufacturer Part Number: VS-EMF050J60U
• Description: 3-levels Half-bridge Inverter Stage, 60 A/57 A
• Manufacturer: Vishay

VS-EMF050J60U
Vishay Semiconductors
www.vishay.com
10
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
93494_22
93494_23
93494_24
1000
Fig. 22 - Typical Q1 - Q4 IGBT Transfer Characteristics
Fig. 23 - Typical Q2 - Q3 IGBT Gate Threshold Voltage
0.01
100
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
90
80
70
60
50
40
30
20
10
10
0.1
0
1
4
0
1
Fig. 24 - Q2 - Q3 IGBT Reverse Bias SOA
V
0.1
CE
T
J
= 20 V
0.2
= 150 °C, V
5
T
T
J
J
0.3
= 125 °C
= 25 °C
10
0.4
6
I
V
V
C
GE
GE
CE
0.5
(mA)
= 15 V, R
T
(V)
(V)
J
= 125 °C
0.6
7
T
J
100
= 25 °C
0.7
For technical questions, contact:
g
= 22 
0.8
8
This datasheet is subject to change without notice.
0.9
1000
Inverter Stage, 60 A/57 A
1.0
9
3-Levels Half-Bridge
93494_25
93494_26
93494_27
[e-mail]
Fig. 25 - Typical Q2 - Q3 IGBT Zero Gate Voltage Collector Current
Fig. 26 - Typical D3 - D4 Antiparallel Diode Forward Characteristics
0.0001
0.001
0.01
100
160
140
120
100
Forward Current vs. Case Temperature per Junction
0.1
80
60
40
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig. 27 - Maximum DC D3 - D4 Antiparallel Diode
1
100
0
0
I
5
0.5
F
200
- Continuous Forward Current (A)
10
1.0
300
15
1.5
20
400
25
125 °C
V
2.0
V
CES
FM
500
30
T
J
(V)
2.5
(V)
= 25 °C
35
600
www.vishay.com/doc?91000
3.0
40 45
Document Number: 93494
25 °C
700
T
3.5
J
= 125 °C
Revision: 18-Mar-11
50 55
800
4.0
900
4.5
60