VS-EMF050J60U Vishay, VS-EMF050J60U Datasheet - Page 11

• Manufacturer Part Number: VS-EMF050J60U
• Description: 3-levels Half-bridge Inverter Stage, 60 A/57 A
• Manufacturer: Vishay

Document Number: 93494
Revision: 18-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
93494_28
93494_29
T
J
1000
= 125 °C, V
100
0.2
4.2
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
Fig. 29 - Typical Q2 - Q3 IGBT Switching Time vs. I
10
Fig. 28 - Typical Q2 - Q3 IGBT Energy Loss vs. I
V
10
10
CC
= 720 V, R
(with Freewheeling D2 - D3 AP Diode)
(with Freewheeling D2 - D3 AP Diode)
20
20
CC
t
f
t
d(on)
= 720 V, R
30
30
g
= 4.7 , V
40
40
t
t
d(off)
I
r
I
g
C
C
Fig. 32 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dI
50
50
= 4.7 , V
E
(A)
(A)
off
GE
60
60
93494_32
= 15 V, L = 500 μH
For technical questions, contact:
E
GE
2500
2250
2000
70
70
1750
1500
1250
1000
on
750
500
= 15 V, L = 500 μH
100
This datasheet is subject to change without notice.
80
80
Inverter Stage, 60 A/57 A
90
90
3-Levels Half-Bridge
125 °C
C
200
C
V
R
= 400 V, I
dI
F
/dt (A/μs)
25 °C
300
F
= 50 A
93494_30
93494_31
[e-mail]
400
280
260
240
220
200
180
160
140
120
100
32
28
24
20
16
12
Fig. 30 - Typical D3 - D4 Antiparallel Diode Reverse
Fig. 31 - Typical D3 - D4 Antiparallel Diode Reverse
8
4
100
100
500
25 °C
125 °C
Recovery Current vs. dI
200
200
Recovery Time vs. dI
V
V
R
R
Vishay Semiconductors
= 400 V, I
= 400 V, I
dI
dI
F
F
/dt (A/μs)
/dt (A/μs)
125 °C
VS-EMF050J60U
300
300
F
/dt
F
F
= 50 A
= 50 A
www.vishay.com/doc?91000
25 °C
F
400
400
/dt
F
/dt
www.vishay.com
500
500
11