VS-EMF050J60U Vishay, VS-EMF050J60U Datasheet - Page 6

• Manufacturer Part Number: VS-EMF050J60U
• Description: 3-levels Half-bridge Inverter Stage, 60 A/57 A
• Manufacturer: Vishay

VS-EMF050J60U
Vishay Semiconductors
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Fig. 3 - Maximum DC Q1 - Q4 IGBT Collector Current vs.
100
100
160
140
120
100
Fig. 1 - Typical Q1 - Q4 IGBT Output Characteristics
Fig. 2 - Typical Q1 - Q4 IGBT Output Characteristics
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0
0
0
0
V
T
I
GE
C
J
0.5
= 125 °C
0.5
- Continuous Collector Current (A)
= 15 V
Case Temperature per Junction
20
1.0
1.0
T
J
= 25 °C
1.5
T
40
J
1.5
V
V
= 125 °C
CE
CE
2.0
DC
(V)
(V)
2.0
60
2.5
2.5
For technical questions, contact:
3.0
T
V
V
V
V
V
J
80
GE
GE
GE
GE
GE
= 150 °C
3.0
This datasheet is subject to change without notice.
= 8 V
= 10 V
= 12 V
= 15 V
= 18 V
3.5
Inverter Stage, 60 A/57 A
100
3.5
4.0
3-Levels Half-Bridge
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[e-mail]
Fig. 4 - Typical Q1 - Q4 IGBT Collector to Emitter Voltage vs.
100
Fig. 5 - Typical Q1 - Q4 IGBT Transfer Characteristics
4.0
4.5
Fig. 6 - Typical Q1 - Q4 IGBT Gate Threshold Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
90
80
70
60
50
40
30
20
10
0
10
3
0
V
V
GE
CE
0.1
= 15 V
= 20 V
T
0.2
J
4
= 25 °C
T
Junction Temperature
J
0.3
= 125 °C
100 A
60
0.4
5
I
V
T
C
GE
J
0.5
T
(mA)
(°C)
J
(V)
= 125 °C
0.6
50 A
6
T
www.vishay.com/doc?91000
110
J
27 A
= 25 °C
Document Number: 93494
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Revision: 18-Mar-11
0.9
160
1.0
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