VS-EMF050J60U Vishay, VS-EMF050J60U Datasheet - Page 7

• Manufacturer Part Number: VS-EMF050J60U
• Description: 3-levels Half-bridge Inverter Stage, 60 A/57 A
• Manufacturer: Vishay

Document Number: 93494
Revision: 18-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Fig. 9 - Typical D5 - D6 Antiparallel Diode Forward Characteristics
Fig. 8 - Typical Q1 - Q4 IGBT Zero Gate Voltage Collector Current
0.0001
0.001
1000
0.01
0.01
100
100
0.1
0.1
10
90
80
70
60
50
40
30
20
10
0
1
1
100
1
0
Fig. 7 - Q1 - Q4 IGBT Reverse Bias SOA
T
J
0.5
200
= 150 °C, V
T
J
1.0
10
= 125 °C
125 °C
300
25 °C
V
V
V
GE
CES
CE
FM
1.5
= 15 V, R
(V)
(V)
(V)
400
100
2.0
For technical questions, contact:
T
g
J
= 22 
= 25 °C
500
2.5
This datasheet is subject to change without notice.
Inverter Stage, 60 A/57 A
1000
600
3.0
3-Levels Half-Bridge
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[e-mail]
T
J
1000
= 125 °C, V
160
140
120
100
100
Forward Current vs. Case Temperature per Junction
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 12 - Typical Q1 - Q4 IGBT Switching Time vs. I
80
60
40
20
10
0
0
Fig. 10 - Maximum DC D5 - D6 Antiparallel Diode
Fig. 11 - Typical Q1 - Q4 IGBT Energy Loss vs. I
V
10
10
CC
0
(with Freewheeling D1 - D2 Clamping Diode)
(with Freewheeling D1 - D2 Clamping Diode)
= 400 V, R
I
F
5
20
20
- Continuous Forward Current (A)
CC
t
f
10
= 400 V, R
30
30
15
g
t
r
Vishay Semiconductors
= 4.7 , V
E
t
d(off)
40
40
off
20
I
I
g
VS-EMF050J60U
C
C
50
50
= 4.7 , V
25
(A)
(A)
GE
30
E
60
60
on
www.vishay.com/doc?91000
= 15 V, L = 500 μH
35
GE
t
d(on)
70
70
= 15 V, L = 500 μH
40
80
80
45
www.vishay.com
50
90
90
C
C
7