VS-EMF050J60U Vishay, VS-EMF050J60U Datasheet - Page 9

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VS-EMF050J60U

Manufacturer Part Number
VS-EMF050J60U
Description
3-levels Half-bridge Inverter Stage, 60 A/57 A
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VS-EMF050J60U
Quantity:
70 000
Document Number: 93494
Revision: 18-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
93494_18
93494_19
100
100
Fig. 18 - Typical Q2 - Q3 IGBT Output Characteristics
Fig. 19 - Typical Q2 - Q3 IGBT Output Characteristics
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
93494_17
0
0
0
0
V
T
0.001
GE
J
0.01
0.5
= 125 °C
0.1
10
0.5
0.00001
= 15 V
1
T
J
1.0
= 125 °C
1.0
1.5
Fig. 17 - Maximum Thermal Impedance Z
V
V
V
V
GE
GE
GE
GE
1.5
V
V
T
CE
= 9 V
= 12 V
= 15 V
= 18 V
CE
J
2.0
= 150 °C
0.0001
(V)
(V)
2.0
2.5
2.5
For technical questions, contact:
3.0
T
J
= 25 °C
3.0
This datasheet is subject to change without notice.
3.5
0.001
Inverter Stage, 60 A/57 A
t
1
3.5
4.0
- Rectangular Pulse Duration (s)
3-Levels Half-Bridge
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
thJC
0.01
Characteristics (D5 - D6 Antiparallel Diode)
93494_20
93494_21
indmodules@vishay.com
Fig. 21 - Typical Q2 - Q3 IGBT Collector to Emitter Voltage vs.
Fig. 20 - Maximum DC Q2 - Q3 IGBT Collector Current vs.
160
140
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
0
10
0
0.1
V
I
GE
C
- Continuous Collector Current (A)
= 15 V
Case Temperature per Junction
20
Junction Temperature
100 A
60
Vishay Semiconductors
40
1
T
VS-EMF050J60U
J
DC
(°C)
60
www.vishay.com/doc?91000
110
27 A
80
10
50 A
www.vishay.com
100
160
9

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