VS-EMF050J60U Vishay, VS-EMF050J60U Datasheet - Page 2

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VS-EMF050J60U

Manufacturer Part Number
VS-EMF050J60U
Description
3-levels Half-bridge Inverter Stage, 60 A/57 A
Manufacturer
Vishay
Datasheet

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Part Number:
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VS-EMF050J60U
Vishay Semiconductors
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1)
(2)
www.vishay.com
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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
ABSOLUTE MAXIMUM RATINGS
PARAMETER
D1 - D2 CLAMPING DIODE
Repetitive peak reverse voltage
Single pulse forward current
Diode continuous forward current
Power dissipation
D3 - D4 AP DIODE
Single pulse forward current
Diode continuous forward current
Power dissipation
D5 - D6 AP DIODE
Single pulse forward current
Diode continuous forward current
Power dissipation
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Q1 - Q4 IGBT
Collector to emitter breakdown voltage
Temperature coefficient of breakdown
voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
V
V
CC
CC
= 400 V, V
= 720 V, V
GE
GE
= 15 V, L = 500 μH, R
= 15 V, L = 500 μH, R
For technical questions, contact:
g
g
= 22 , T
= 22 , T
SYMBOL
BV
V
SYMBOL
V
This datasheet is subject to change without notice.
I
I
I
V
FSM
FSM
FSM
P
P
P
RRM
BV
V
GE(th)
I
I
I
F
F
F
J
CE(ON)
I
I
D
D
D
V
CES
GE(th)
CES
GES
g
GE
= 25 °C unless otherwise noted)
CES
fe
J
J
Inverter Stage, 60 A/57 A
/T
/T
= 150 °C
= 150 °C
J
3-Levels Half-Bridge
J
10 ms sine or 6 ms rectangular pulse, T
T
T
T
T
10 ms sine or 6 ms rectangular pulse, T
T
T
T
T
10 ms sine or 6 ms rectangular pulse, T
T
T
T
T
C
C
C
C
C
C
C
C
C
C
C
C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
V
V
V
V
V
V
V
V
V
V
V
V
V
GE
GE
GE
GE
GE
GE
CE
CE
CE
CE
GE
GE
GE
= 0 V, I
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= V
= V
= 20 V, I
= 20 V, I
= 0 V, V
= 0 V, V
= ± 20 V, V
GE
GE
TEST CONDITIONS
, I
, I
TEST CONDITIONS
C
C
C
C
CE
CE
indmodules@vishay.com
C
C
C
C
C
C
= 500 μA
= 500 μA (25 °C to 125 °C)
= 250 μA
= 1 mA (25 °C to 125 °C)
= 27 A
= 50 A
= 27 A, T
= 50 A, T
= 50 A
= 50 A
= 600 V
= 600 V, T
CE
= 0 V
J
J
= 125 °C
= 125 °C
J
= 125 °C
J
J
J
= 25 °C
= 25 °C
= 25 °C
MIN.
600
2.9
-
-
-
-
-
-
-
-
-
-
-
www.vishay.com/doc?91000
0.003
0.170
Document Number: 93494
TYP.
1.44
- 10
0.1
1.8
1.7
2.2
3.9
5.9
MAX.
95
600
150
150
150
176
100
-
-
68
46
84
53
36
99
46
31
96
54
Revision: 18-Mar-11
MAX.
± 200
1.75
2.05
2.1
2.5
5.3
0.1
3
-
-
-
-
-
UNITS
W
W
W
UNITS
mV/°C
V
A
A
A
A
A
A
V/°C
mA
nA
V
V
s
V

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