LMX2355SLB National Semiconductor, LMX2355SLB Datasheet - Page 6
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LMX2355SLB
Manufacturer Part Number
LMX2355SLB
Description
PLLatinum Fractional N RF/ Integer N IF Dual Low Power Frequency Synthesizer
Manufacturer
National Semiconductor
Datasheet
1.LMX2355SLB.pdf
(23 pages)
www.national.com
Charge Pump Current Specification Definitions
I1 = CP sink current at V
I2 = CP sink current at V
I3 = CP sink current at V
I4 = CP source current at V
I5 = CP source current at V
I6 = CP source current at V
Note 4: I
||6|}]
Note 5: I
Note 6: I
25˚C|]/||5
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
*
100%
Do
Do-sink
Do
@
25˚C|
vs V
vs T
vs I
A
Do
*
= Charge Pump Output Current magnitude variation vs Temperature = [||2
Do-source
= Charge Pump Output Current magnitude variation vs Voltage = [
100%
Do
Do
Do
Do
Do
Do
= Vp − V
= Vp/2
= V
= Charge Pump Output Current Sink vs Source Mismatch = [||2| − ||5|]/[
= Vp − V
= Vp/2
= V
6
1
⁄
2
*
{||1| − ||3|}]/[
@
temp| − ||2
CC
1
and ground. Typical values are between 0.5V and 1.0V.
⁄
2
1
*
⁄
2
{||2| + ||5|}]
*
@
{||1| + ||3|}]
25˚C|]/||2
*
100%
*
@
100% and [
25˚C|
*
100% and [||5
1
⁄
2
20004823
*
{||4| − ||6|}]/[
@
temp| − ||5
1
⁄
2
*
{||4| +
@