MBM29DS163TE Fujitsu Media Devices, MBM29DS163TE Datasheet - Page 25

• Manufacturer Part Number: MBM29DS163TE
• Description: (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
• Manufacturer: Fujitsu Media Devices

Read/Reset Command
Autoselect Command
COMMAND DEFINITIONS
The device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the device to the
read mode. Some commands require Bank Address (BA) input. When command sequences are inputed to bank
being read, the commands have priority over reading. “MBM29DS163TE/BE Command Definitions” Table in “
DEVICE BUS OPERATION” defines the valid register command sequences. Note that the Erase Suspend (B0h)
and Erase Resume (30h) commands are valid only while the Sector Erase operation is in progress. Also the
Program Suspend (B0h) and Program Resume (30h) commands are valid only while the Program operation is
in progress. Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read
mode. Please note that commands are always written at DQ
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
Reset operation is initiated by writing the Read/Reset command sequence into the command register. Micro-
processor read cycles retrieve array data from the memory. The device remain enabled for reads until the
command register contents are altered.
The device will automatically power-up in the Read/Reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no
spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Character-
istics and Waveforms for the specific timing parameters.
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the device resides in the target system. PROM pro-
grammers typically access the signature codes by raising A
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming method-
ology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by firstly writing two unlock cycles. This is followed by a third
write cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and actual data of memory cell can be read from the another bank.
Following the command write, a read cycle from address (BA) 00h retrieves the manufacture code of 04h. A
read cycle from address (BA) 01h for 16 ( (BA) 02h for 8) returns the device code. (See “MBM29DS163TE/
BE Sector Group Protection Verify Autoselect Codes” Table and “Expanded Autoselect Code “ Table in “ DEVICE
BUS OPERATION”.)
The sector state (protection or unprotection) will be informed by address (BA) 02h for 16 ( (BA) 04h for 8) .
Scanning the sector group addresses (A
produce a logical “1” at device output DQ
performed by verify sector group protection on the protected sector. (See “MBM29DS163TE/BE User Bus
Operations (BYTE = V
DEVICE BUS OPERATION”.)
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and
device codes and sector protection status from non-selected bank, it is necessary to write Read/Reset command
sequence into the register and then Autoselect command should be written into the bank to be read.
If the software (program code) for Autoselect command is stored into the Flash memory, the device and manu-
facture codes should be read from the other bank which doesn’t contain the software.
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register. To
execute the Autoselect command during the operation, writing Read/Reset command sequence must precede
the Autoselect command.
IH
)” Table and “MBM29DS163TE/BE User Bus Operations (BYTE = V
19
0
for a protected sector group. The programming verification should be
, A
18
, A
17
, A
16
, A
9
15
to a high voltage. However, multiplexing high voltage
, A
7
to DQ
14
MBM29DS163TE/BE
, A
13
0
, and A
and DQ
5
12
1) to Read/Reset mode, the Read/
) while (A
15
to DQ
8
6
bits are ignored.
, A
1
, A
0
)
IL
)” Table in “
(0, 1, 0) will
10
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