MBM29DS163TE Fujitsu Media Devices, MBM29DS163TE Datasheet - Page 45
MBM29DS163TE
Manufacturer Part Number
MBM29DS163TE
Description
(MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
Manufacturer
Fujitsu Media Devices
Datasheet
1.MBM29DS163TE.pdf
(67 pages)
- Current page: 45 of 67
- Download datasheet (741Kb)
Notes : PA is address of the memory location to be programmed.
PD is data to be programmed at byte address.
DQ
D
Figure indicates the last two bus cycles out of four bus cycle sequence.
These waveforms are for the 16 mode (the addresses differ from 8 mode) .
OUT
7
is the output of the complement of the data written to the device.
is the output of the data written to the device.
Address
WE
OE
CE
Data
Alternate CE Controlled Program Operation Timing Diagram
t
GHEL
t
WS
3rd Bus Cycle
555h
t
WC
t
t
A0h
DS
CP
t
CPH
t
AS
t
t
WH
DH
PA
t
PD
AH
MBM29DS163TE/BE
t
Data Polling
WHWH1
DQ
PA
7
D
OUT
10
45
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