MBM29DS163TE Fujitsu Media Devices, MBM29DS163TE Datasheet - Page 38
MBM29DS163TE
Manufacturer Part Number
MBM29DS163TE
Description
(MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
Manufacturer
Fujitsu Media Devices
Datasheet
1.MBM29DS163TE.pdf
(67 pages)
- Current page: 38 of 67
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38
MBM29DS163TE/BE
* : Test Conditions :
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE or BYTE Switching Low or High
AC CHARACTERISTICS
• Read Only Operations Characteristics
Output Load : C
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or 2.0 V
Timing measurement reference level
Note : C
Input : 0.5
Output : 0.5
L
30 pF including jig capacitance
Parameter
V
L
CC
V
CC
30 pF
f
f
JEDEC
Device
Under
Test
10
t
t
t
t
t
t
t
GHQZ
AVAV
AVQV
ELQV
GLQV
EHQZ
AXQX
Symbol
Standard
C
t
L
READY
t
t
t
ELFH
t
t
t
ELFL
ACC
t
t
t
OH
RC
CE
OE
DF
DF
CE
OE
OE
Condition
V
V
V
IL
IL
IL
Min
100
0
Value *
Max
100
100
35
30
30
20
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
s
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