MBM29DS163TE Fujitsu Media Devices, MBM29DS163TE Datasheet - Page 39

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MBM29DS163TE

Manufacturer Part Number
MBM29DS163TE
Description
(MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
Manufacturer
Fujitsu Media Devices
Datasheet
Write Cycle Time
Address Setup Time
Address Setup Time to OE Low During Toggle Bit Polling
Address Hold Time
Address Hold Time from CE or OE High During Toggle Bit
Polling
Data Setup Time
Data Hold Time
Output Enable Hold Time
CE High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write
Read Recover Time Before Write
CE Setup Time
WE Setup Time
CE Hold Time
WE Hold Time
Write Pulse Width
CE Pulse Width
Write Pulse Width High
CE Pulse Width High
Programming Operation
Sector Erase Operation*
V
Rise Time to V
Rise Time to V
Voltage Transition Time*
Write Pulse Width*
OE Setup Time to WE Active*
CE Setup Time to WE Active*
Recover Time From RY/BY
RESET Pulse Width
CC
• Write/Erase/Program Operations
Setup Time
ID
ACC
*
2
*
3
2
Parameter
1
2
Read
Toggle and Data Polling
Byte
Word
2
2
JEDEC
t
t
t
t
t
t
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
DVWH
WHDX
WHEH
EHWH
WLWH
WHWL
AVWL
WLAX
GHWL
AVAV
GHEL
ELWL
WLEL
ELEH
EHEL
Symbol
MBM29DS163TE/BE
Standard
t
t
t
t
WHWH1
WHWH2
t
t
t
t
VACCR
t
t
t
t
t
t
t
GHWL
t
t
t
CEPH
OEPH
GHEL
OESP
t
t
t
t
VLHT
t
t
t
t
t
t
WPH
VIDR
WPP
t
t
t
ASO
OEH
CPH
VCS
CSP
AHT
WC
WH
DH
WS
CH
WP
AS
AH
DS
CS
CP
RB
RP
Min
100
500
500
100
500
15
50
50
10
20
20
50
50
35
35
50
0
0
0
0
0
0
0
0
0
0
4
4
4
0
Value *
Typ
16
8
1
1
Max
(Continued)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
s
s
s
s
s
10
39

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