MBM29DS163TE Fujitsu Media Devices, MBM29DS163TE Datasheet - Page 30

• Manufacturer Part Number: MBM29DS163TE
• Description: (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
• Manufacturer: Fujitsu Media Devices

30
MBM29DS163TE/BE
HiddenROM Protect Command
Write Operation Status
In Progress
Exceeded
Time Limits
There are two methods to protect the HiddenROM area. One is to write the sector group protect setup command
(60h) , set the sector address in the HiddenROM area and (A
protect command (60h) during the HiddenROM mode. The same command sequence could be used because,
it is just as the extension sector group protect in the past except that it is in the HiddenROM mode and it does
not apply high voltage to RESET pin. Please refer to “Function Explanation Extentended Sector Group Protection”
for details of extention sector group protect setting.
The other method is to apply high voltage (V
and (A
apply high voltage (V
and read. When “1” appears on DQ
Please apply write pulse again. The same command sequence could be used for the above method because
other than the HiddenROM mode, it is the same with the sector group protect in the past. Please refer to “Function
Explanation Sector Group Protection” for details of the sector group protect setting.
Other sector group will be effected if the address other than those for HiddenROM area is selected for the sector
group address. Once it is protected, protection cannot be cancelled; so pay the closest attention.
Detailed in “Hardware Sequence Flags” Table are all the status flags that determine the status of the bank for
the current mode operation. The read operation from the bank which does not operate Embedded Algorithm
returns data of memory cells. These bits offer a method for determining whether a Embedded Algorithm is
properly completed. The information on DQ
sector is consectively read, then the DQ
erasing sector is consectively read. This allows users to determine which sectors are in erase and which are not.
The status flag is not output from bank (non-busy bank) which does not execute Embedded Algorithm. For
example, there is bank (busy bank) now executing Embedded Algorithm. When the read sequence is [1] busy
bank
the data of memory cells are outputted. In the erase-suspend read mode with the same read sequence, DQ
will not be toggled in the [1] and [3].
In the erase suspend read mode, DQ
outputted.
6
, [2]
, A
1
, A
Embedded Program Algorithm
Embedded Erase Algorithm
Program
Suspended
Mode
Erase
Suspended
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Suspended
Mode
0
non-busy bank
)
(0, 1, 0) , and apply the write pulse during the HiddenROM mode. To verify the protect circuit,
ID
) to A
Program Suspend Read
Program Suspend Read
Erase Suspend Read
Erase Suspend Read
Erase Suspend Program
Erase Suspend Program
(Program Suspended Sector)
(Non-Program Suspended Sector)
(Erase Suspended Sector)
(Non-Erase Suspended Sector)
(Non-Erase Suspended Sector)
(Non-Erase Suspended Sector)
9
, specify (A
Status
, [3]
0
, the protect setting is completed. “0” will appear on DQ
Hardware Sequence Flags Table
busy bank
2
is toggled in the [1] and [3]. In case of [2], the data of memory cell is
2
6
, A
bit will toggle. However, DQ
10
2
1
is address sensitive. This means that if an address from an erasing
, A
ID
) to A
0
)
, the DQ
9
(0, 1, 0) and the sector address in the HiddenROM area,
and OE, set the sector address in the HiddenROM area
6
is toggling in the case of [1] and [3]. In case of [2],
6
, A
1
, A
0
2
)
Data
Data
Data
DQ
DQ
DQ
DQ
DQ
will not toggle if an address from a non-
0
1
0
7
7
7
7
7
(0, 1, 0) , and write the sector group
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Data
Data
Data
DQ
1
6
Data Data
Data Data
Data Data
DQ
0
0
0
0
1
1
1
0
5
if it is not protected.
DQ
0
1
0
0
0
1
0
3
Toggle*
Toggle
Data
Data
Data
DQ
N/A
N/A
1*
1
1
2
6