si4410dy-02 NXP Semiconductors, si4410dy-02 Datasheet - Page 2

• Manufacturer Part Number: si4410dy-02
• Description: Si4410dy N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 08048
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
D
D
DM
S
j
stg
j
DS
tot
DS
GS
tot
DSon
drain-source voltage (DC)
drain current
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
gate-source voltage (DC)
drain current
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current
Quick reference data
Limiting values
Conditions
T
T
T
V
V
Conditions
T
T
T
T
T
T
T
j
amb
amb
GS
GS
j
amb
amb
amb
amb
amb
amb
= 25 to 150 C
= 25 to 150 C
Rev. 02 — 05 July 2001
= 10 V; I
= 4.5 V; I
= 25 C; pulsed; t
= 25 C; pulsed; t
= 25 C; pulsed; t
= 70 C; pulsed; t
= 25 C; pulsed; t
= 25 C; pulsed; t
= 70 C; pulsed; t
= 25 C; pulsed; t
D
D
N-channel enhancement mode field-effect transistor
= 10 A; T
= 5 A; T
p
p
p
p
p
p
p
p
j
j
= 25 C
= 25 C
10 s
10 s
10 s;
10 s;
10 s;
10 s;
10 s;
10 s
Figure 2
Figure 2
Figure 1
Figure 1
Figure 3
and
3
© Philips Electronics N.V. 2001. All rights reserved.
Typ
11
15
Min
55
55
Si4410DY
Max
30
10
2.5
150
13.5
20
Max
30
10
8
50
2.5
1.6
+150
+150
2.3
20
2 of 13
Unit
V
A
W
m
m
Unit
V
V
A
A
A
W
W
A
C
C
C