si4410dy-02 NXP Semiconductors, si4410dy-02 Datasheet - Page 7

• Manufacturer Part Number: si4410dy-02
• Description: Si4410dy N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08048
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
V GS(th)
j
= 25 C and 150 C; V
= 250 A; V
(V)
junction temperature.
drain current; typical values.
2.5
1.5
0.5
g fs
(S)
40
30
20
10
2
1
0
0
-60
0
V DS > I D x R DSon
DS
10
= V
0
GS
20
max
typ
min
DS
60
I
D
30
T j = 25 ºC
150 ºC
R
DSon
120
40
T j (
I D (A)
o
03ae24
03aa33
C)
180
50
Rev. 02 — 05 July 2001
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
(pF)
10 -1
(A)
10 -2
10 -3
10 -4
10 -5
10 -6
gate-source voltage.
as a function of drain-source voltage; typical
values.
I D
C
= 0 V; f = 1 MHz
10 4
10 3
10
10 -1
0
DS
0.5
= 5 V
1
1
min
1.5
typ
© Philips Electronics N.V. 2001. All rights reserved.
10
2
max
V DS (V)
Si4410DY
2.5
V GS (V)
C iss
C oss
C rss
03aa36
03ad54
10 2
3
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