si4410dy-02 NXP Semiconductors, si4410dy-02 Datasheet - Page 4

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si4410dy-02

Manufacturer Part Number
si4410dy-02
Description
Si4410dy N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet
7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 08048
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
th(j-a)
T
amb
Z th(j-amb)
thermal resistance from junction to ambient
= 25 C
Thermal characteristics
(K/W)
10 -1
10 -2
10 2
10
1
10 -4
0.2
0.1
0.05
0.02
= 0.5
single pulse
7.1 Transient thermal impedance
10 -3
10 -2
Rev. 02 — 05 July 2001
10 -1
Conditions
mounted on a printed circuit board; t
minimum footprint;
N-channel enhancement mode field-effect transistor
1
Figure 4
10
P
10 2
t p
p
T
© Philips Electronics N.V. 2001. All rights reserved.
10 s
t
p
(s)
=
t p
T
t
Si4410DY
03ad49
;
10 3
Value Unit
50
4 of 13
K/W

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