si4410dy-02 NXP Semiconductors, si4410dy-02 Datasheet - Page 6

• Manufacturer Part Number: si4410dy-02
• Description: Si4410dy N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08048
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
R DSon
j
= 25 C
= 25 C
( )
0.03
0.02
0.01
function of drain-source voltage; typical values.
of drain current; typical values.
(A)
I D
50
40
30
20
10
0
0
0
0
T j = 25 ºC V GS = 3.2 V
10
0.5
10 V
20
5 V
3.4 V
30
1
V GS = 2.6 V
3.6 V
V DS (V)
40
I D (A)
3.8 V
4.5 V
3.8 V
3.6 V
3.4 V
3.2 V
2.8 V
10 V
03ad50
03ad51
5 V
3 V
1.5
50
Rev. 02 — 05 July 2001
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
= 25 C and 150 C; V
=
function of gate-source voltage; typical values.
factor as a function of junction temperature.
(A)
1.6
1.2
0.8
0.4
I D
a
50
40
30
20
10
--------------------------- -
R
2
0
0
DSon 25 C
-60
R
0
DSon
V DS > I D x R DSon
0
1
T j = 150 ºC
DS
60
2
I
D
© Philips Electronics N.V. 2001. All rights reserved.
25 ºC
R
DSon
120
3
Si4410DY
V GS (V)
T
j
(ºC)
03ad52
03ad57
180
4
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