si4410dy-02 NXP Semiconductors, si4410dy-02 Datasheet - Page 8

• Manufacturer Part Number: si4410dy-02
• Description: Si4410dy N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08048
Product data
Fig 13. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
(A)
source-drain (diode forward) voltage; typical
values.
I S
50
40
30
20
10
0
0
V GS = 0 V
150 ºC
0.4
GS
0.8
= 0 V
T j = 25 ºC
1.2
V SD (V)
03ad53
1.6
Rev. 02 — 05 July 2001
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
I
D
= 10 A; V
V GS
charge; typical values.
(V)
10
8
6
4
2
0
0
I D = 10 A
V DD = 15 V
T j = 25 ºC
DD
= 15 V
10
20
© Philips Electronics N.V. 2001. All rights reserved.
30
Si4410DY
Q G (nC)
03ad55
40
8 of 13