adc14155wrqv National Semiconductor Corporation, adc14155wrqv Datasheet - Page 11

• Manufacturer Part Number: adc14155wrqv
• Description: Adc14155qml 14-bit, 155 Msps, 1.1 Ghz Bandwidth A/d Converter
• Manufacturer: National Semiconductor Corporation

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
guaranteed to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under
the listed test conditions. Operation of the device beyond the maximum Operating Ratings is not recommended.
Note 2: All voltages are measured with respect to GND = AGND = DGND = DRGND = 0V, unless otherwise specified.
Note 3: When the input voltage at any pin exceeds the power supplies (that is, V
±50 mA maximum package input current rating limits the number of pins that can safely exceed the power supplies with an input current of ±5 mA to 10.
Note 4: The maximum allowable power dissipation is dictated by T
can be calculated using the formula P
operated in a severe fault condition (e.g. when input or output pins are driven beyond the power supply voltages, or the power supply polarity is reversed). Such
conditions should always be avoided.
Note 5: Human Body Model is 100 pF discharged through a 1.5 kΩ resistor.
Note 6: The inputs are protected as shown below. Input voltage magnitudes above V
(Note
Note 7: To guarantee accuracy, it is required that |V
Note 8: With the test condition for V
Note 9: Typical figures are at T
guaranteed.
Note 10: Integral Non Linearity is defined as the deviation of the analog value, expressed in LSBs, from the straight line that passes through positive and negative
full-scale.
Note 11: The input capacitance is the sum of the package/pin capacitance and the sample and hold circuit capacitance.
Note 12: Optimum performance will be obtained by keeping the reference input in the 0.9V to 1.1V range. The LM4051CIM3-ADJ (SOT-23 package) is
recommended for external reference applications.
Note 13: I
V
supply voltage, C
Note 14: Test at wafer sort only
Note 15: Pre and post irradiation limits are identical to those listed in the Electrical Characteristics tables. Radiation testing is performed per MIL-STD-883, Test
Method 1019.
Note 16: Guaranteed by characterization.
Note 17: Guaranteed by design.
DR
, and the rate at which the outputs are switching (which is signal dependent). I
3). However, errors in the A/D conversion can occur if the input goes above 2.6V or below GND as described in the Operating Ratings section.
DR
is the current consumed by the switching of the output drivers and is primarily determined by load capacitance on the output pins, the supply voltage,
n
is total capacitance on the output pin, and f
A
= 25°C and represent most likely parametric norms at the time of product characterization. The typical specifications are not
REF
D,max
= +1.0V (2V
= (T
J,max
P-P
- T
A
–V
A
differential input), the 14-bit LSB is 122.1 µV.
D
)/θ
|
≤
JA
100 mV and separate bypass capacitors are used at each power supply pin.
. The values for maximum power dissipation listed above will be reached only when the device is
n
is the average frequency at which that pin is toggling.
J,max
, the junction-to-ambient thermal resistance, (θ
11
IN
DR
< AGND, or V
=V
A
or below GND will not damage this device, provided current is limited per
DR
(C
20210711
0
x f
0
IN
+ C
> V
1
A
x f
), the current at that pin should be limited to ±5 mA. The
1
+....C
11
x f
JA
11
), and the ambient temperature, (T
) where V
DR
is the output driver power
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A
), and