mf1011b900y NXP Semiconductors, mf1011b900y Datasheet - Page 2

• Manufacturer Part Number: mf1011b900y
• Description: Microwave Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
Intended for use in common base
class C broadband pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the
1030 MHz to 1090 MHz band. Also
suitable for medium pulse, heavy duty
operation within this band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with base connected
to flange.
1997 Feb 18
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Suitable for short and medium
pulse applications up to 100 s
pulse width, duty factor 10%
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure provides high emitter
efficiency
Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power
sharing and reduces thermal
resistance
Internal input and output
prematching networks allow an
easier design of circuits.
Microwave power transistor
QUICK REFERENCE DATA
Microwave performance up to T
narrowband amplifier.
PINNING - SOT448A
handbook, 4 columns
Class C
OPERATION
MODE OF
PIN
1
2
3
WARNING
3
Top view
t
collector
emitter
base connected to flange
2
CONDITIONS
p
= 1%
= 10 s;
Fig.1 Simplified outline and symbol.
1
2
mb
= 25 C in a common-base class C
(GHz)
1.09
f
DESCRIPTION
3
V
(V)
50
CC
MAM045
MF1011B900Y
b
(W)
800
P
Product specification
L
c
e
(dB)
G
6
p
(%)
40
C