mf1011b900y NXP Semiconductors, mf1011b900y Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
mf1011b900y
Manufacturer Part Number
mf1011b900y
Description
Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.MF1011B900Y.pdf
(12 pages)
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Philips Semiconductors
Input and optimum load impedances
V
1997 Feb 18
handbook, full pagewidth
CE
Microwave power transistor
V
= 50 V; typical values at P
CC
= 50 V; Z
o
= 10 ; P
(GHz)
1.03
1.09
1.15
f
o
= 240 W.
+ j
– j
L
0
= P
0.2
0.2
Fig.6 Input impedance as a function of frequency.
1.15 GHz
L1
(see Figs 6 and 7).
Z i
0.5
0.5
0.2
1.03 GHz
1.09 GHz
0.5
0.22 + j0.19
0.23 + j0.12
0.19 + j0.06
( )
Z
1
7
1
i
2
2
2
5
10
MLC724
5
5
10
10
0.14
0.12
0.09 j0.09
MF1011B900Y
( )
Z
Product specification
L
j0.10
j0.08
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