mf1011b900y NXP Semiconductors, mf1011b900y Datasheet - Page 3

• Manufacturer Part Number: mf1011b900y
• Description: Microwave Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 18
handbook, halfpage
V
V
V
V
I
P
T
T
T
CM
stg
j
sld
CBO
CES
CEO
EBO
tot
Microwave power transistor
t
SYMBOL
P tot
p
(W)
= 10 s;
1800
1200
600
0
50
= 1%.
Fig.2 Power derating curve.
0
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
50
PARAMETER
100
150
T
mb
MLC721
( C)
o
200
open emitter
R
open base
open collector
t
T
t
p
mb
BE
= 10 s; = 1%
10 s; note 1
3
< 75 C; t
= 0
CONDITIONS
p
10 s;
1%
MF1011B900Y
MIN.
65
Product specification
65
65
15
3
50
1750
+200
200
235
MAX.
V
V
V
V
A
W
UNIT
C
C
C