km416s1120d ETC-unknow, km416s1120d Datasheet - Page 27
![no-image](/images/no-image-200.jpg)
km416s1120d
Manufacturer Part Number
km416s1120d
Description
512k X 16bit X 2 Banks Synchronous Dram Lvttl
Manufacturer
ETC-unknow
Datasheet
1.KM416S1120D.pdf
(43 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
km416s1120dT-G8
Manufacturer:
SAMSUNG
Quantity:
2 526
Company:
Part Number:
km416s1120dT-G8
Manufacturer:
SAMSUNG
Quantity:
2 526
Company:
Part Number:
km416s1120dT-G8
Manufacturer:
SEC
Quantity:
304
Part Number:
km416s1120dT-G8
Manufacturer:
SEC
Quantity:
20 000
KM416S1120D
0
1
*Note : 1. All inputs expect CKE & DQM can be don
2
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
4. A10/AP and BA control bank precharge when precharge command is asserted.
2. Bank active & read/write are controlled by BA.
A10/AP
A10/AP
3
BA
0
1
0
1
0
0
1
4
BA
BA
X
0
1
0
1
0
1
5
Active & Read/Write
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Both Banks
Precharge
Bank A
Bank B
6
Bank A
Bank B
7
8
- 27
¡Ç
9
t care when CS is high at the CLK high going edge.
Operation
10
11
12
13
14
15
CMOS SDRAM
Rev. 1.4 (Jun. 1999)
16
17
18
19