tc59lm814 TOSHIBA Semiconductor CORPORATION, tc59lm814 Datasheet - Page 25

• Manufacturer Part Number: tc59lm814
• Description: 256mbits Network Fcram1
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(BA0, BA1)
MULTIPLE BANK READ-WRITE TIMING (BL = 2)
(BA0, BA1)
MULTIPLE BANK READ-WRITE TIMING (BL = 4)
Command
Command
Bank Add.
Bank Add.
CL = 3
CL = 4
CL = 3
CL = 4
DQS
DQS
DQS
DQS
CLK
CLK
CLK
CLK
DQ
DQ
DQ
DQ
I
I
RCD
RCD
Note: “×” is don’t care
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Bank “a”
Bank “a”
WRAa
WRAa
= 1 cycle
0
= 1 cycle
0
I
RBD
I
I
RBD
RC
= 2 cycles
to the same bank must be satisfied.
LALa
LALa
= 2 cycles
1
×
1
×
I
I
WRD
WRD
WL = 2
Bank “b”
Bank “b”
WL = 2
RDAb
RDAb
I
= 1 cycle
= 1 cycle
RCD
WL = 3
2
2
WL = 3
I
RCD
t
t
DQSS
DQSS
= 1 cycle
= 1 cycle
LALb
LALb
Da0 Da1
Da0 Da1
3
3
I
t
t
RWD
DQSS
DQSS
×
DESL
Da2 Da3
Da0 Da1
= 2 cycles I
Da0 Da1
4
×
CL = 3
4
CL = 3
I
RWD
DESL
Hi-Z
I
RCD
Bank “c”
WRAc
CL = 4
CL = 4
= 3 cycles I
Hi-Z
Da2 Da3
= 1 cycle I
5
5
RBD
Hi-Z
I
RCD
Bank “c”
WRAc
LALc
= 2 cycles
Hi-Z
6
6
×
= 1 cycle I
Qb0 Qb1
Qb0 Qb1
RBD
WRD
Bank “d”
WL = 2
= 2 cycles
RDAd
LALc
I
= 1 cycle
RC
TC59LM814/06CTG-50,-60
7
×
7
WL = 3
Qb2 Qb3
Qb0 Qb1
Qb0 Qb1
t
WRD
= 5 cycles
DQSS
WL = 2
Bank “d”
RDAd
LALd
= 1 cycle
Dc0 Dc1
WL = 3
8
8
I
Qb2 Qb3
RCD
I
t
t
RWD
DQSS
DQSS
×
= 1 cycle
DESL
LALd
Dc0 Dc1
= 2 cycles
Dc0 Dc1
9
9
2005-06-21 25/39
CL = 3
Hi-Z
Bank “c”
WRAc
CL = 4
Hi-Z
Dc2 Dc3
Dc0 Dc1 Dc2
I
10
10
RCD
×
t
DESL
DQSS
Hi-Z
Hi-Z
= 1 cycle
LALc
Rev 1.2
11
11
×
Qd0