hn7g09fe TOSHIBA Semiconductor CORPORATION, hn7g09fe Datasheet
hn7g09fe
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hn7g09fe Summary of contents
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... GSS I 100 200 DP Symbol Rating Unit P (Note) 100 150 °C j −55~150 T °C stg (top view HN7G09FE Unit EMITTER 2. BASE 3. DRAIN 4. SOURCE 5. GATE 6. COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-2J1A Weight:0.003 g (typ.) 2005-03-23 ...
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... MHz C V rss MHz C V oss mA 0 off 2 HN7G09FE Min Typ. Max Unit ⎯ ⎯ 100 nA ⎯ ⎯ 500 nA ⎯ 0.082 0.15 mA ⎯ ⎯ 80 ⎯ 0.1 0.3 V ⎯ 1.5 5.0 V ⎯ ...
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... A V recommended voltage of 2 higher is required for turning on this product OUT ( OUT (ON) requires a higher voltage than V GS (on) 3 HN7G09FE 90% 10% 10% 90 off = 100 D and (off) < V < (off) ...
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... Q1 (Transistor) 4 HN7G09FE 2005-03-23 ...
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... Gate-Source voltage V GS (V) 2 Common Source 0 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 125 150 0 Ambient temperature Ta (°C) 5 HN7G09FE I – −25° – (ON) GS Common Source 100°C 25°C −25° – ...
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... Drain current I D (mA) C iss C oss C rss 100 6 HN7G09FE I – −0.6 −0.8 −1 −1.2 −1.4 t – Common Source 0~2 25° 100 2005-03-23 ...
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... Q2 Common – Ta 200 150 100 100 125 AMBIENT TEMPERATURE Ta (°C) *:Total rating 150 175 7 HN7G09FE 2005-03-23 ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 8 HN7G09FE 030619EAA 2005-03-23 ...