hn7g09fe TOSHIBA Semiconductor CORPORATION, hn7g09fe Datasheet - Page 3

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hn7g09fe

Manufacturer Part Number
hn7g09fe
Description
Toshiba Multichip Discrete Device
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Switching Time Test Circuit
Precaution
(a) Test circuit
µA for this product. For normal switching operation, V
requires a lower voltage than V
V
Take this into consideration when using the device.
A V
th
GS
can be expressed as the voltage between gate and source when the low operating current value is I
5 V
recommended voltage of 2.5 V or higher is required for turning on this product.
0
V
D.U. < = 1%
V
(Z
Common source
Ta = 25°C
DD
IN
out
10 µ s
: t
= 5 V
r
= 50 Ω )
, t
f
< 5 ns
IN
th
. (The relationship can be established as follows: V
R
V
OUT
L
DD
(b) V
(c) V
3
OUT
IN
GS (on)
requires a higher voltage than V
V
DS (ON)
V
5 V
DD
0 V
GS (off)
t
on
10%
< V
t
r
10%
90%
th
< V
HN7G09FE
th
GS (on)
t
2005-03-23
90%
off
and V
t
.)
f
D
GS (off)
= 100

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