hn7g09fe TOSHIBA Semiconductor CORPORATION, hn7g09fe Datasheet - Page 2

• Manufacturer Part Number: hn7g09fe
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
Q2
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Gate leakage current
Drain-Source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(
(MOSFET)
Transistor
Characteristic
Characteristic
Electrical Characteristics
)
Turn-on time
Turn-off time
Electrical Characteristics
V
R
V
Symbol
V
Symbol
(BR) DSS
V
R1/R2
DS (ON)
CE (sat)
I
I
I
I
I
C
I(OFF)
|Y
C
C
CBO
CEO
h
C
EBO
I(ON)
GSS
DSS
R1
V
t
t
f
on
off
FE
oss
rss
T
ob
iss
th
fs
|
V
V
V
V
I
V
V
V
V
V
I
V
V
V
I
I
V
V
V
V
V
(Ta = 25°C)
C
D
D
D
CB
CE
EB
CE
CE
CE
CE
CB
GS
DS
DS
DS
DS
DS
DS
DD
GS
= 5 mA, I
= 0.1 mA, V
= 10 mA, V
= 10 mA, V
(Ta = 25°C)
2
= 50 V, I
= 50 V, I
= 10 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= 30 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= ± 16 V, V
= 5 V, I
= 0~5 V
Test Condition
Test Condition
B
C
C
D
D
D
GS
GS
GS
C
C
E
E
E
= 0.25 mA
C
GS
GS
= 10 mA
= 0.1 mA
= 0.1 mA
= 10 mA
GS
= 10 mA,
GS
= 0
= 0
= 0
= 5 mA
= 0, f = 1 MHz
DS
= 5 mA
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
⎯
⎯
= 4 V
= 2.5 V
= 0
= 0
= 0
0.082
32.9
Min
Min
0.8
1.5
1.0
0.9
80
30
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
250
180
0.1
1.0
2.2
4.0
7.8
3.6
8.8
50
⎯
⎯
⎯
⎯
⎯
⎯
47
⎯
⎯
⎯
⎯
⎯
3
HN7G09FE
2005-03-23
Max
0.15
61.1
Max
100
500
0.3
5.0
1.5
1.1
1.5
4.0
7.0
± 1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
MHz
Unit
Unit
mA
mS
k Ω
nA
nA
pF
µ A
µ A
pF
pF
pF
ns
V
V
V
V
V
Ω