hn7g09fe TOSHIBA Semiconductor CORPORATION, hn7g09fe Datasheet - Page 5

• Manufacturer Part Number: hn7g09fe
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2 (MOSFET)
250
200
150
100
50
10
0
8
6
4
2
0
8
7
6
5
4
3
2
1
0
−25
0
0
Common Source
I D = 10 mA
10
0
VGS = 2.5 V
Drain-Source voltage V DS (V)
40
Ambient temperature Ta (°C)
0.5
4
Drain current I D (mA)
25
V GS = 2.5 V
R
R
80
DS (ON)
DS (ON)
I
50
D
3
4 V
– V
4 V
1
DS
75
– Ta
120
–I
D
Common Source
Ta = 25°C
Common Source
Ta = 25°C
100
1.5
V GS = 2.1 V
160
125
2.7
2.5
2.3
200
150
2
5
1000
0.01
100
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
−25
1
6
5
4
3
2
1
0
2
1
0
0
0
Common Source
V DS = 3 V
Common Source
I D = 0.1 mA
V DS = 3 V
25°C
0
Gate-Source voltage V GS (V)
Gate-Source voltage V GS (V)
2
Ambient temperature Ta (°C)
Ta = 100°C
1
25
R
DS (ON)
−25°C
4
I
50
V
D
Ta = 100°C
25°C
−25°C
th
– V
2
– Ta
GS
– V
75
6
GS
Common Source
I D = 10 mA
100
3
8
HN7G09FE
125
2005-03-23
150
10
4