hn7g09fe TOSHIBA Semiconductor CORPORATION, hn7g09fe Datasheet - Page 6

• Manufacturer Part Number: hn7g09fe
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2 (MOSFET)
10000
1000
5000
3000
1000
500
300
100
500
300
100
100
0.5
0.3
0.1
50
30
10
50
30
10
50
30
10
5
3
1
5
3
1
0.1
0.1
1
Common Source
V DS = 3 V
Ta = 25°C
t f
t on
t r
t off
Drain-Source voltage V DS (V)
Drain current I D (mA)
Drain current I D (mA)
10
1
1
⎪ Y
C – V
t – I
fs
⎪ – I
D
DS
D
100
10
10
Common Source
V DD = 5 V
V GS = 0~5 V
Ta = 25°C
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
C iss
C oss
C rss
1000
100
100
6
10000
5000
3000
1000
250
200
150
100
500
300
100
50
50
30
10
0
0.1
0
t on
t off
Common Source
V GS = 0 V
Ta = 25°C
G
−0.2
t f
t r
Drain-Source voltage V DS (V)
−0.4
Drain current I D (mA)
D
S
1
I
−0.6
DR
I DR
t – I
– V
D
−0.8
DS
10
Common Source
V DD = 3 V
V GS = 0~2.5 V
Ta = 25°C
−1
HN7G09FE
−1.2
2005-03-23
−1.4
100