th50vsf3582 TOSHIBA Semiconductor CORPORATION, th50vsf3582 Datasheet - Page 37
![no-image](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_sml.jpg)
th50vsf3582
Manufacturer Part Number
th50vsf3582
Description
Sram And Flash Memory Mixed Multi-chip Package
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TH50VSF3582.pdf
(50 pages)
- Current page: 37 of 50
- Download datasheet (637Kb)
FLASH AUTO-PROGRAM OPERATION (
FLASH AUTO CHIP ERASE/AUTO BLOCK ERASE OPERATION (
Address
Address
V
CEF
WE
D
CCf
OE
D
V
IN
CEF
OUT
WE
D
CCf
OE
IN
Notes: Word mode address shown
t
VCS
Note: Word Mode address shown.
t
VCS
t
BA: Block address for Auto Block Erase operation
OES
555H
PA: Program address
PD: Program data
t
OES
555H
t
CMD
AAH
t
CMD
AAH
2AAH
2AAH
55H
55H
Hi-Z
WE
555H
555H
-CONTROLLED)
80H
A0H
555H
PA
AAH
PD
TH50VSF3582/3583AASB
t
OEHP
WE
2AAH
t
PPW
-CONTROLLED)
55H
PA
2001-06-08 37/50
DQ
7
555H/BA
D
10H/30H
OUT
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