hys64t128021hdl-3-b Infineon Technologies Corporation, hys64t128021hdl-3-b Datasheet - Page 18

• Manufacturer Part Number: hys64t128021hdl-3-b
• Description: 200-pin So-dimm Ddr2 Sdram Modules
• Manufacturer: Infineon Technologies Corporation

3
3.1
Table 9
Parameter
Voltage on any pins relative to
Voltage on
Voltage on
Storage Humidity (without condensation)
1) Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
3.2
Table 10
Parameter
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
4) For Self Refresh Operation above 85 C it is necessary to set extended mode register 2 (EMR(2)) Bit A7 to "1" to enable
5) Up to 3000 m.
Data Sheet
functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
the High Temperature Self Refresh option.
V
V
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
DC Operating Conditions
Operating Conditions
DD
DDQ
relative to
relative to
V
V
SS
SS
V
SS
Symbol
V
V
V
H
IN
DD
DDQ
STG
,
V
OUT
Symbol
T
T
T
PBar
H
OPR
CASE
STG
OPR
18
Values
Min.
– 0.5
– 1.0
– 0.5
5
Values
Min.
0
0
– 50
+69
10
HYS64T[32/64/128]xxxHDL-[2.5/…/5]-B
Max.
2.3
2.3
2.3
95
SO-DIMM DDR2 SDRAM Module
Max.
+65
+95
+100
+105
90
Unit
V
V
V
%
Electrical Characteristics
05122005-2TKP-OM7N
Unit
kPa
%
C
C
C
t
REFI
Note/Test
Condition
1)
1)
1)
1)
Rev 1.00, 2005-06
= 3.9 s
Notes
1)2)3)4)
5)