hys64t128021hdl-3-b Infineon Technologies Corporation, hys64t128021hdl-3-b Datasheet - Page 37

• Manufacturer Part Number: hys64t128021hdl-3-b
• Description: 200-pin So-dimm Ddr2 Sdram Modules
• Manufacturer: Infineon Technologies Corporation

Table 30
Parameter
Active to Active / Auto-Refresh command period
Active bank A to Active bank B command delay
Active to Precharge Command
Precharge Command Period
Auto-Refresh to Active / Auto-Refresh command period
Average periodic Refresh interval
1)
2)
3.4.2
The ODT function adds additional current consumption
to the DDR2 SDRAM when enabled by the EMRS(1).
Depending on address bits A[6,2] in the EMRS(1) a
“weak” or “strong” termination can be selected. The
Table 31
Parameter
Enabled ODT current per DQ
ODT is HIGH; Data Bus inputs are FLOATING
Active ODT current per DQ
ODT is HIGH; worst case of Data Bus inputs are
STABLE or SWITCHING.
Note: For power consumption calculations the ODT duty cycle has to be taken into account
Data Sheet
4 & 8 (1 kB page size)
16 (2 kB page size)
I
On Die Termination (ODT) Current
ODT current per terminated pin
DD
Measurement Test Condition for DDR2–400B
0 C
85 C
T
T
CASE
CASE
Symbol Min.
I
I
ODTO
ODTT
85 C
95 C
37
current consumption for any terminated input pin,
depends on the input pin is in tri-state or driving 0 or 1,
as long a ODT is enabled during a given period of time.
5
2.5
10
5
Symbol
t
t
t
t
t
t
t
t
RC.IDD
RRD.IDD
RAS.MIN.IDD
RAS.MAX.IDD
RP.IDD
RFC.IDD
REFI
REFI
HYS64T[32/64/128]xxxHDL-[2.5/…/5]-B
Typ.
6
3
12
6
SO-DIMM DDR2 SDRAM Module
–5
DDR2–400B
55
7.5
10
40
7000
15
105
7.8
3.9
Max. Unit
7.5
3.75
15
7.5
mA/DQ A6 = 0, A2 = 1
mA/DQ A6 = 1, A2 = 0
mA/DQ A6 = 0, A2 = 1
mA/DQ A6 = 1, A2 = 0
Electrical Characteristics
05122005-2TKP-OM7N
EMRS(1) State
Rev 1.00, 2005-06
Unit Notes
ns
ns
ns
ns
ns
ns
ns
s
s
1)
2)