k4r881869e Samsung Semiconductor, Inc., k4r881869e Datasheet - Page 13

• Manufacturer Part Number: k4r881869e
• Description: 288mbit Rdram 512k X 18bit X 32s Banks
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869E
Electrical Characteristics
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.
b. This measurement is made in automatic current control mode after at least 64 current control calibration operations to a device and after CCA and
c. This measurement is made in automatic current control mode in a 25Ω test system with V
Θ
I
I
I
∆I
r
I
I
V
V
CCB are initialized to a value of 64. This value applies to all DQA and DQB pins.
and ASYMB register fields set to 0.
REF
OH
ALL
OUT
OL,NOM
I,CMOS
JC
OL,CMOS
OH,CMOS
OL
Symbol
Junction-to-Case thermal resistance
V
RSL output high current @ (0≤V
RSL I
RSL I
RSL I
RSL I
Dynamic output impedance @ V
RSL I
RSL I
RSL I
CMOS input leakage current @ (0≤V
CMOS output voltage @ I
CMOS output high voltage @ I
REF
current @ V
OL
OL
OL
OL
OL
OL
OL
current @ t
current @ t
current @ t
current resolution step
current @ V
current @ V
current @ V
REF,MAX
CYCLE
CYCLE
CYCLE
OL
OL
OL
Parameter and Conditions
= 1.0V
= 1.0V
= 1.0V
OL,CMOS
= 1.667ns V
= 1.875ns V
=2.50ns V
Table 10: Electrical Characteristics
OH,CMOS
b,c
b,c
b,c
OL
OUT
@ t
@ t
@ t
= 1.0mA
= 0.9V
≤V
OL
I,CMOS
CYCLE
CYCLE
CYCLE
OL
OL
DD
= -0.25mA
= 0.9V, V
= 0.9V, V
= 0.9V, V
)
≤V
=2.5ns
=1.667ns
=1.875ns
CMOS
Page 11
DD,MIN
DD,MIN
DD,MIN
)
, T
, T
, T
J,MAX
J,MAX
J,MAX
a
TERM
a
a
= 1.714V and V
V
CMOS
-10.0
Min
32.0
32.0
30.0
27.1
27.1
26.6
150
-10
-10
-
-
-
-0.3
Version 1.4 Dec. 2003
REF
= 1.357V and with the ASYMA
Direct RDRAM
Max
90.0
90.0
90.0
30.1
30.1
30.6
10.0
0.5
1.5
0.3
10
10
-
-
°C/Watt
Unit
mA
mA
mA
µA
µA
µA
Ω
V
V
™