k4r881869e Samsung Semiconductor, Inc., k4r881869e Datasheet - Page 18

• Manufacturer Part Number: k4r881869e
• Description: 288mbit Rdram 512k X 18bit X 32s Banks
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869E
Absolute Maximum Ratings
I
a. CMOS interface consumes power in all power states.
b. x18 RDRAM device data width.
c. This does not include the I
a. The supply current will be 150mA when t
DD
V
V
T
T
I
I
I
I
I
I
I
I
I
DD,PDN
DD,NAP
DD,STBY
DD,REFRESH
DD,ATTN
DD,ATTN-W
DD,ATTN-R
DD,PWRUP,D
DD,SETR,D
I
STORE
MIN
Note*) Component : refer to T
I,ABS
DD,ABS
DD
Symbol
- Supply Current Profile
value
Symbol
, V
DDA,ABS
Device in PDN, self-refresh enabled and INIT.LSR=0.
Device in NAP.
Device in STBY. This is the average for a device in STBY with (1) no
packets on the Channel, and (2) with packets sent to other devices.
Device in STBY and refreshing rows at the t
Device in ATTN. This is the average for a device in ATTN with (1) no
packets on the Channel, and (2) with packets sent to other devices.
Device in ATTN. ACT command every 8•t
every 8•t
Device in ATTN. ACT command every 8•t
every 8•t
RDRAM Power State and Steady-State Transaction Rates
I
I
DD
DD
CYCLE
CYCLE
from power -on to SETR
from SETR to CLRR
OL
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Minimum operation temperature
sink current. The RDRAM device dissipates I
, WR command every 4•t
, RD command every 4•t
J,
Θ
Parameter
JC
Module: refre to T
CYCLE
Table 16: Supply Current at Initialization
is in the range 15ns to 1000ns.
Table 14: Absolute Maximum Ratings
Table 15: Supply Current Profile
Parameter
CYCLE
CYCLE
PLATE, MAX
CYCLE
CYCLE
REF,MAX
, and data is 1111..1111
, and data is 1100..1100
, PRE command
, PRE command
Allowed Range of t
period.
Page 16
1.667ns to 2.5ns
1.667ns to 2.5ns
OL
•
V
OL
in each output driver when a logic one is driven.
a
c
CYCLE
Min
-
-
-
-
-
-
-
(1200MHz
830(x18)
830(x18)
, -32)
Max
6000
115
170
Min
115
- 0.3
- 0.5
- 50
4
0
V
V
V
DD,MIN
DD,MIN
b
Version 1.4 Dec. 2003
DD
Direct RDRAM
(1066MHz
740(x18)
750(x18)
, -32P)
Max
6000
105
105
160
V
V
4
Min
Note*
Max
DD
DD
100
-
-
+0.3
+1.0
(800MHz
, -40/-45)
580(x18)
600(x18)
Max
200
332
Max
6000
135
95
95
4
a
Unit
°C
°C
V
V
Unit
mA
mA
Unit
mA
mA
mA
mA
mA
mA
uA
™