k4r881869e Samsung Semiconductor, Inc., k4r881869e Datasheet - Page 16

• Manufacturer Part Number: k4r881869e
• Description: 288mbit Rdram 512k X 18bit X 32s Banks
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869E
Timing Characteristics
a. t
b. This parameter also applies to a-1200 part when operated with t
c. This parameter also applies to a-1200 or -1066 part when operated with t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Q
QR
Q1
HR
QR1
PROP1
NAPXA
NAPXB
PDNXA
PDNXB
AS
SA
ASN
ASP
Q,MIN
Symbol
, t
, t
QF
QF1
and t
Q,MAX
CTM-to-DQA/DQB output time @ t
CTM-to-DQA/DQB output time @ t
CTM-to-DQA/DQB output time @ t
DQA/DQB output rise and fall times @ t
DQA/DQB output rise and fall times @ t
DQA/DQB output rise and fall times @ t
SCK(neg)-to-SIO0 delay @ C
SCK(pos)-to-SIO0 delay @ C
SIO
SIO0-to-SIO1 or SIO1-to-SIO0 delay @ C
NAP exit delay - phase A
NAP exit delay - phase B
PDN exit delay - phase A
PDN exit delay - phase B
ATTN-to-STBY power state delay
STBY-to-ATTN power state delay
ATTN/STBY-to-NAP power state delay
ATTN/STBY-to-PDN power state delay
for other t
OUT
rise/fall @ C
CYCLE
values can be interpolated between or extrapolated from the timings at the 3 specified t
LOAD,MAX
LOAD,MAX
LOAD,MAX
Parameter
= 20pF
Table 12: Timing Characteristics
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
= 20pF (SD read data hold).
= 20pF (SD read data valid).
LOAD,MAX
=1.667ns
=1.875ns
=2.5ns
CYCLE
=1.667ns
=1.875ns
=2.5ns
= 1.875ns
Page 14
CYCLE
= 20pF
= 2.50ns
-0.195
-0.260
-0.170
Min
0.2
0.2
0.2
2
-
-
-
-
-
-
-
-
-
-
-
a,b
a,c
a
Version 1.4 Dec. 2003
+0.195
+0.260
+0.170
Max
9000
0.32
0.32
0.45
10
12
20
50
40
Direct RDRAM
4
1
0
8
8
-
a,b
a,c
a
CYCLE
t
t
t
t
t
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
Unit
values.
µs
ns
ns
ns
ns
ns
ns
ns
ns
Figure(s)
Figure 58
Figure 58
Figure 61
Figure 61
Figure 61
Figure 61
Figure 50
Figure 50
Figure 50
Figure 50
Figure 48
Figure 48
Figure 49
Figure 49
™